3BHB018162R0001 Power semiconductor switching devices
3BHB018162R0001 In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages.
Small on-state pressure drop, small loss, on-state pressure drop of about 11V;
Very high dv/dt and di/dt tolerance, dv/dt has reached 2kV/s, di/dt is 2kA/s;
The switching speed is fast, the switching loss is small, the opening time is about 200ns, the 1000V device can be turned off within 2s;
ABB 5SHX1960L0005, 91mm RC-IGCT
IGCT 5SHX1960L0006, 91MM GVC736
51MM,5SHX0660F0002, RC-IGCT
5SHY4045L0001 IGCT MODULE
5SHX1060H0003, 68MM RC-IGCT
MODULE 5SHY3545L0016, 4500V, 91MM
IGCT 4500V, 91MM, 5SHY4045L0003
4500V, 91MM, 5SHY4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
4500V, 91MM, 5SHY3545L0014
MODULE 5SHY3545L0014, 4500V, 91MM
IGCT REPLACEMENT TOOL IGCT
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