Power Electronic Device 5SHX1060H0003
5SHX1060H0003 Power semiconductor switching devices
5SHX1060H0003 In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages.
High voltage, large current capacity, blocking voltage up to 3000V, peak current up to 1000A, maximum turn-off current density of 6000kA/m2;
Small on-state pressure drop, small loss, on-state pressure drop of about 11V;
Very high dv/dt and di/dt tolerance, dv/dt has reached 2kV/s, di/dt is 2kA/s;
The switching speed is fast, the switching loss is small, the opening time is about 200ns, the 1000V device can be turned off within 2s;
ABB 5SHX1960L0005, 91mm RC-IGCT
IGCT 5SHX1960L0006, 91MM GVC736
51MM,5SHX0660F0002, RC-IGCT
5SHY4045L0001 IGCT MODULE
5SHX1060H0003, 68MM RC-IGCT
MODULE 5SHY3545L0016, 4500V, 91MM
IGCT 4500V, 91MM, 5SHY4045L0003
4500V, 91MM, 5SHY4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
4500V, 91MM, 5SHY3545L0014
MODULE 5SHY3545L0014, 4500V, 91MM
IGCT REPLACEMENT TOOL IGCT
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