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5SHX1445H0001 3BHB003230R0101 Power semiconductor device

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The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.

-Brand: ABB

-Model Name:5SHX1445H0001 3BHB003230R0101 Power semiconductor device

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5SHX1445H0001 3BHL000391P0101 3BHB003230R0101 5SXE05-0152
5SHX1445H0001 3BHB003230R0101 Power semiconductor device
5SHX1445H0001 3BHB003230R0101 Power semiconductor device

Power Electronic devices (power electronic devices), also known as power semiconductor devices, are used in power conversion and power control circuits with high power (usually referring to currents of tens to thousands of amps and voltages of hundreds of volts or more) electronic devices. It can be divided into semi-controlled devices, fully controlled devices and uncontrollable devices. The thyristor is a semi-controlled device with the highest voltage and current capacity in all devices. The power diode is an uncontrollable device with simple structure and principle and reliable operation. It can also be divided into voltage driven devices and current driven devices, of which GTO and GTR are current driven devices, and IGBT and power MOSFET are voltage driven devices.

The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.

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IGCT 4500V, 91MM, 5SHY4045L0003
4500V, 91MM, 5SHY4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
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IGCT REPLACEMENT TOOL IGCT

 

Model: S-113N
Old order number 3BHB018008R0001
New order number 3BHB018008R0101
Net weight: 175 kg
Country of origin: Poland
Phase module

Model: S-093H
Old order number: 3BHB030478R0009
New order number: 3BHB030478R0309
Net weight: 220 kg
Country of origin: Poland
Phase module

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