5SHX14H4502 3BHB003230R0101 5SXE05-0152 3BHB003023P201
5SHX14H4502 3BHB003230R0101 IGBT Electric voltage driven device
5SHX14H4502 3BHB003230R0101 IGBT Electric voltage driven device
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect.
5SHX14H4502 3BHB003230R0101 IGBT Electric voltage driven device
The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.
5SHX1960L0006 3BHB016120R0002 IGBT semiconductor switching device
5SHX1960L0005, 91mm RC-IGCT
IGCT 5SHX1960L0006, 91MM GVC736
5SHX0660F0002, 51MM RC-IGCT
5SHY4045L0001 IGCT MODULE
5SHX1060H0003, 68MM RC-IGCT
IGCT MODULE 5SHY3545L0016, 4500V, 91MM
IGCT 4500V, 91MM, 5SHY4045L0003
4500V, 91MM, 5SHY4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
IGCT 4500V, 91MM, 5SHY3545L0014
IGCT MODULE 5SHY3545L0014, 4500V, 91MM
IGCT REPLACEMENT TOOL IGCT
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage frequency converter for use in large power electronics sets.
Model: S-113N
Old order number 3BHB018008R0001
New order number 3BHB018008R0101
Net weight: 175 kg
Country of origin: Poland
Phase module
Model: S-093H
Old order number: 3BHB030478R0009
New order number: 3BHB030478R0309
Net weight: 220 kg
Country of origin: Poland
Phase module
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