5SHX2645L0002/3HB012961R0001 Power semiconductor device

5SHX2645L0002/3HB012961R0001 Power semiconductor device

5SHX2645L0002/3HB012961R0001 Power semiconductor device

Power Electronic devices (power electronic devices), also known as power semiconductor devices, are used in power conversion and power control circuits with high power (usually referring to currents of tens to thousands of amps and voltages of hundreds of volts or more) electronic devices. It can be divided into semi-controlled devices, fully controlled devices and uncontrollable devices. The thyristor is a semi-controlled device with the highest voltage and current capacity in all devices. The power diode is an uncontrollable device with simple structure and principle and reliable operation. It can also be divided into voltage driven devices and current driven devices, of which GTO and GTR are current driven devices, and IGBT and power MOSFET are voltage driven devices.

The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.

5SHX1960L0005, 91mm RC-IGCT
IGCT 5SHX1960L0006, 91MM GVC736
5SHX0660F0002, 51MM RC-IGCT
5SHY4045L0001 IGCT MODULE
5SHX1060H0003, 68MM RC-IGCT
IGCT MODULE 5SHY3545L0016, 4500V, 91MM
IGCT 4500V, 91MM, 5SHY4045L0003
4500V, 91MM, 5SHY4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
IGCT 4500V, 91MM, 5SHY3545L0014
IGCT MODULE 5SHY3545L0014, 4500V, 91MM
IGCT REPLACEMENT TOOL IGCT