ABB 5SHY3545L0009 3BHB013085R0001 3BHE0096 Power module
5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 Integrated Gate Commutated thyristor IGCT(Intergrated Gate Commutated Thyristors is the first power semiconductor device introduced in 1996 for large power electronics packages.
IGCT is a kind of high power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor.
Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its best way to achieve the low on-state voltage drop,
high blocking voltage and transistor stable switching characteristics of the organic combination. IGCT trigger power is small, the trigger and condition monitoring circuit and IGCT core can be made into a whole, 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 through two optical fibers input trigger signal,
output working status signal. IGCT combines the advantages of GTO technology and modern power transistor IGBT in one, using the key technology of simple and reliable series series of high-power turn-off devices, making IGCT in the field of high-voltage and high-power applic ations with power between 0.5MVA and 100MVA without real rivals.
The advantages of low IGCT loss, fast switching and so on make it reliable and perfect for 300 kVA ~ 10MVA converters, without the need for series or parallel. In series, the inverter power can be extended to 100MVA. Although the high power IGBT module has some excellent characteristics, 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 If you can achieve di/dt and dv/dt active control, active clamping, easy to achieve short circuit current protection and active protection.
However, due to the defects of high conduction loss, open circuit caused by damage and no long-term reliable operation data, the practical application of high power IGBT module in high power low frequency converter is limited. Therefore, IGCT will become the power device of high power frequency converter.
ABB 5SHY3545L0009 3BHB013085R0001 3BHE0096 Power module
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